MZ-V7E1T0

Model Number|MZ-V7E1T0
Product Name|Samsung MZ-V7E1T0 1 TB Solid State Drive
Product Type|Solid State Drive
Storage Capacity|1 TB
Storage Type|Internal
Interface|PCIe Gen 3.0 x4, NVMe 1.3
Usage Application|Client PCs
Sequential Read Speed|Up to 3400 MBps
Sequential Write Speed|Up to 2500 MBps
Random Read Speed|Random Read (4KB, QD32): Up to 500,000 IOPS Random Read, Random Read (4KB, QD1): Up to 15,000 IOPS Random Read
Random Write Speed|Random Write (4KB, QD32): Up to 450,000 IOPS Random Write, Random Write (4KB, QD1): Up to 50,000 IOPS Random Write
NAND Flash|Samsung V-NAND 3-bit MLC
Trim Support|Supported
AES Encryption|AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
Security|AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
S.M.A.R.T. Support|Supported
GC (Garbage Collection)|Auto Garbage Collection Algorithm
Device Sleep Mode Support|Yes
Internal Storage|Yes
Temperature Proof|Yes
NVMe|Yes
Gaming SSDs|Yes
Average Power Consumption|Average: 6 Watts, Maximum: 10 Watts (Burst mode)
Power Consumption (Idle)|Max. 30 mW
Voltage|3.3 Volts +- 5 % Allowable voltage
Reliability (MTBF)|1.5 Million Hours Reliability (MTBF)
Form Factor|M.2 (2280)
Management SW|Magician Software for SSD management
Flash Memory Technology|Triple Level Cell (TLC)
Features|TCG Opal 2.0, TRIM Support, S.M.A.R.T Support, NVM Express (NVMe), 256-Bit AES Encryption, Device Sleep Mode Support, Auto Garbage Collection Algorithm
Hardware Encryption|Yes
Dimensions|Width 3.16 x Height 0.87 x Depth 0.09 Inches
Weight|0.28 oz.

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